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基于TI公司的LMG5200三相GaN逆变器参考设计TIDA-00909

来源：中电网

2018-11-06

类别：工业控制

325

拍明

原标题：TI LMG5200三相GaN逆变器参考设计TIDA-00909

　　TI公司的LMG5200是80V GaN半桥功率级,包括两个80V18-mΩGaN FET,输入电压高达80VDC,单独的高边和低边TTL输入,TTL逻辑输入能耐电压高达14V,时延典型为29.5ns,传输时延匹配2ns,主要用在CNC驱动,非军用无人机,电源转换,伺服驱动和马达控制.本文介绍了LMG5200主要特性,功能框图,48V/10A高频PWM三相GaN逆变器参考设计TIDA-00909主要特性,框图,电路图,材料清单和PCB完整设计图.

　　The LMG5200 device, a 80-V driver, GaN half-bridge power stage, provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two, 80-V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.

　　The TTL logic compatible inputs can withstand input voltages up to 14 V regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range. GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance CISS. All the devices are mounted on a completely bond-wire-free package platform with minimized package parasitic elements. The LMG5200 device is available in a 6 mm × 8 mm × 2 mm lead free package and can be easily mounted on PCBs.

　　The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor. It reduces the board requirements for maintaining clearance and creepage requirements for medium voltage GaN applications while minimizing the loop inductances to ensure fast switching.

　　The LMG5200 device brings ease of designing high power density boards without the need for underfill whilemaintaining creepage and clearance requirements. The propagation delays between the high-side gate driverand low-side gate driver are matched to allow very tight control of dead time. Controlling the dead time is criticalin GaN-based applications to maintain high efficiency. HI and LI can be independently controlled to minimize thethird quadrant conduction of the low-side FET for hard switched buck converters. A very small propagationmismatch between the HI and LI to the drivers for both the falling and rising thresholds ensures dead times of<10 ns. Co-packaging the GaN FET half-bridge with the driver ensures minimized common source inductance.

　　This minimized inductance has a significant performance impact on hard-switched topologies.The built in bootstrap circuit with clamp prevents the high-side gate drive from exceeding the GaN FETsmaximum gate-to-source voltage (Vgs) without any additional external circuitry. The built-in driver has anundervoltage lockout (UVLO) on the VDD and bootstrap (HB-HS) rails. When the voltage is below the UVLOthreshold voltage, the device ignores both the HI and LI signals to prevent the GaN FETs from being partially turned on. Below UVLO, if there is sufficient voltage (VVCC > 2.5 V), the driver actively pulls the high-side andlow-side gate driver output low. The UVLO threshold hysteresis of 200 mV prevents chattering and unwantedturn-on due to voltage spikes. Use an external VCC bypass capacitor with a value of 0.1 μF or higher. A size of0402 is recommended to minimize trace length to the pin. Place the bypass and bootstrap capacitors as close to the device as possible to minimize parasitic inductance.

　　LMG5200主要特性:

　　Input Voltage up to 80-V DC

　　Integrated 80-V, 18-mΩ, GaN FETs

　　Optimized Pinout for Easy PCB Layout

　　Internal Bootstrap Supply Voltage Clamping to Prevent GaN FET Overdrive

　　Supply Rail Undervoltage Lockout

　　Independent High-Side and Low-Side TTL Logic Inputs

　　Fast Propagation Times (29.5 ns Typical)

　　Excellent Propagation Delay Matching (2 ns Typical)

　　Low Power Consumption

　　LMG5200应用:

　　CNC Drives

　　Manufacturing Robots

　　Non-military Drones

　　Power: Telecom DC/DC Module: Digital

　　Servo Drives & Motion Control

　　图1.LMG5200功能框图

　　图2.LMG5200降压转换器连接图

　　48V/10A高频PWM三相GaN逆变器参考设计TIDA-00909

　　Low voltage, high-speed drives and/or low inductancebrushless motors require higher inverter switchingfrequencies in the range of 40 kHz to 100 kHz tominimize losses and torque ripple in the motor. TheTIDA-00909 reference design achieves this by usinga 3-phase inverter with three 80V/10A half-bridgeGaN power modules LMG5200 and uses shunt basedphase current sensing. Gallium nitride (GaN)transistors can switch much faster than silicon FETsand integrating the GaN FET and driver in the samepackage reduces parasitic inductances and optimizesswitching performance reducing losses, thus allowingto down-size or eliminate the heatsink. The TIDA-00909 offers a TI BoosterPack compatible interface toconnect to a C2000 MCU LaunchPad™ developmentkit for easy performance evaluation

　　三相GaN逆变器参考设计TIDA-00909特性:

　　3-phase GaN inverter with wide input voltagerange 12V to 60V and 7Arms/10Apeak outputcurrent, tested up to 100 kHz PWM.

　　GaN power stage with greatly reducedswitching losses allows high PWM switching

　　frequencies with peak efficiency up to 98.5%at 100 kHz PWM.

　　LMG5200 GaN half-bridge power stage easePCB layout and reduce parasitic inductancesfor optimized switching performance, lessthan 2ns rise/fall time.

　　Very low switch node voltage over- andundershoot with very low 12.5ns dead band

　　minimize phase voltage ringing, as well asreduce phase voltage distortions and EMI.

　　Precision shunt-based phase current sensingwith high accuracy (0.1%).

　　TI BoosterPack compatible interface with3.3V I/O for easy performance evaluation witha C2000 MCU LaunchPad™ development kit.