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TI DRV8305-Q1汽车三相BLDC栅极驱动方案

来源：中电网

2018-12-10

类别：汽车电子

307

拍明

原标题：TI DRV8305-Q1汽车三相BLDC栅极驱动方案

　　TI公司的drv8305-Q1是三相马达驱动用的栅极驱动器,提供三个半桥驱动器,每个能驱动高边和低边N沟MOSFET;电荷泵驱动器支持100%占空比.器件满足AEC-Q100标准,4.4-V 到45-V工作电压,栅极峰值电流1.25A和1A,工作温度–40℃到150℃,主要用在三相BLDC和PMSM马达,汽车油泵和水泵,风扇和鼓风电动机.本文介绍了DRV8305-Q1主要特性,功能框图,典型应用电路图以及DRV8305-Q1EVM汽车三相马达栅极驱动评估模块主要特性,框图,电路图和材料清单.

　　The DRV8305-Q1 device is a gate driver IC for three-phase motor-drive applications. The device provides three high-accuracy half-bridge drivers, each capable of driving a high-side and low-side N-channel MOSFET. A charge pump driver supports 100% duty cycle and low-voltage operation for cold crank situations. The device can tolerate load dump voltages up to 45-V.

　　The DRV8305-Q1 device includes three bidirectional current-shunt amplifiers for accurate low-side current measurements that support variable gain settings and an adjustable offset reference.

　　The DRV8305-Q1 device has an integrated voltage regulator to support an MCU or other system power requirements. The voltage regulator can be interfaced directly with a LIN physical interface to allow low-system standby and sleep currents.

　　The gate driver uses automatic handshaking when switching to prevent current shoot through. The VDS of both the high-side and low-side MOSFETs is accurately sensed to protect the external MOSFETs from overcurrent conditions. The SPI provides detailed fault reporting, diagnostics, and device configurations such as gain options for the current shunt amplifier, individual MOSFET overcurrent detection, and gate-drive slew-rate control.

　　Device Options:

　　DRV8305NQ: Grade 1 with voltage reference

　　DRV83053Q: Grade 1 with 3.3-V, 50-mA LDO

　　DRV83055Q: Grade 1 with 5-V, 50-mA LDO

　　DRV8305NE: Grade 0 with voltage reference

　　DRV8305-Q1主要特性:

　　AEC-Q100 Qualified for Automotive Applications

　　Ambient Operating Temperature Ranges:

　　Temperature Grade 0(E): –40℃ to 150℃

　　Temperature Grade 1(Q): –40℃ to 125℃

　　4.4-V to 45-V Operating Voltage

　　1.25-A and 1-A Peak Gate Drive Currents

　　Smart Gate Drive Architecture (IDRIVE & TDRIVE)

　　Programmable High- and Low-Side Slew-Rate Control

　　Charge-Pump Gate Driver for 100% Duty Cycle

　　Three Integrated Current-Shunt Amplifiers

　　Integrated 50-mA LDO (3.3-V and 5-V Option)

　　3-PWM or 6-PWM Input Control up to 200 kHz

　　Single PWM-Mode Commutation Capability

　　Serial Peripheral Interface (SPI) for Device Settings and Fault Reporting

　　Thermally-Enhanced 48-Pin HTQFP

　　Protection Features:

　　Fault Diagnostics and MCU Watchdog

　　Programmable Dead-Time Control

　　MOSFET Shoot-Through Prevention

　　MOSFET VDS Overcurrent Monitors

　　Gate-Driver Fault Detection

　　Reverse Battery-Protection Support

　　Limp Home-Mode Support

　　Overtemperature Warning and Shutdown

　　DRV8305-Q1应用:

　　Three-Phase BLDC and PMSM Motors

　　Automotive Fuel and Water Pumps

　　Automotive Fans and Blowers

　　图1.DRV8305-Q1功能框图

　　图2.DRV8305-Q1典型应用电路图

　　DRV8305-Q1EVM汽车三相马达栅极驱动评估模块

　　The DRV8305-Q1EVM evaluation module (EVM) is a 4.4 V to 45 V, 25 A, 3-phase motor drive and control system based on the DRV8305-Q1 automotive motor gate driver, TMS320F28027 motor control microcontroller, and CSD18540Q5B NexFET™ power MOSFET. The EVM allows for simple evaluation of the DRV8305-Q1 with a wide array of test points, interfaces, and configurability.

　　The EVM has onboard reverse battery protection, a regulated 3.3 V supply from the TPS7B6933-Q1 LDO, interface header for all control and feedback signals , and onboard XDS100v2 emulator. The EVM has individual DC bus and phase voltage sense as well as individual low-side current shunt sense for sensorless BLDC control algorithms. The drive stage is fully protected with short circuit, thermal, shoot-through, and undervoltage protection and is easily configurable via an SPI interface.

　　The EVM is ideal for evaluation and rapidly developing with the DRV8305-Q1, with primary software support through MotorWare using the InstaSPIN-FOC sensorless control solution.